Epitaxy on demand

At our institute, we excel in providing bespoke solutions in the realm of III-V semiconductor epitaxy. Utilizing cutting-edge equipment, we bridge the gap between research and industry by enabling pilot series production of advanced devices for power and high-frequency electronics, as well as semiconductor lasers.

Our expertise in wafer epitaxy allows us to offer a comprehensive suite of services, including:

  • Custom epitaxy of specific layer structures tailored to your requirements
  • Development and small-scale production of epitaxial layers
  • Expert scientific consultation
  • Thorough characterization and analysis of grown layer structures

Partner with us to leverage our state-of-the-art technology and in-depth knowledge, driving innovation in your projects and pushing the boundaries of what’s possible in high-tech applications.

Our epitaxy offer for up to 2 inch wafers:

Laser structures (emission wavelenght 650 nm to 15 µm)

  • Diode lasers (GaAs 750-1080 nm and GaSb 1800-2400 nm)
  • Quantum Cascade lasers (QCL 3000-15000 nm)
  • VECSEL

THz emitters and detectors

Detectors

  • Shortwave IR: InGaAs and extended InGaAs
  • Mid- and longwave IR: Type-II-SL, QWIP, avalanche
  • Ultra-fast detectors

Electronics

  • III-V based pHEMT, mHEMT
  • Ultrafast transistors.

SESAME

Antimony-based templates

Others upon request. We can use our developed growth procedures or grow according to customers.

Our MBE reactor:

VEECO GENXplor R&D MBE system:

  • 2’’ wafers;
  • Extremely high composition and thickness accuracy (error <1.5%);
  • Group III: In, 2xGa, Al;
    Group V: As cracker, Sb cracker, Bi;
    Dopants: Si, Be, Te (GaTe)

MBE GROWTH