GaAs- & Sb-based optoelectronics

In our semiconductor section, we specialize in designing and manufacturing custom diode lasers based on gallium arsenide (GaAs) III-V semiconductor layer structures, covering wavelengths from 0.65 µm to 15 µm. Our primary focus is on enhancing output power, efficiency, beam quality, and reliability. FTMC diode lasers find applications in diverse fields, including materials processing, solid-state laser pumping, metrology, medicine, nonlinear optics, display technology, sensor technology, quantum technologies, and space applications. Also, we work with InAs and AlAs based systems.

In addition to our work with gallium arsenide, our Optoelectronics Department also excels in designing and fabricating advanced optoelectronic devices using antimony-based material systems. These materials are particularly suited for mid-infrared range applications. By leveraging the unique properties of antimony compounds, we enhance performance in terms of sensitivity, efficiency, and wavelength versatility. Our antimony-based optoelectronic solutions are ideal for applications in environmental monitoring, medical diagnostics, spectroscopy, infrared imaging, and defense technologies.